IRF540N (TO-220-3) MOSFET (Pack Of 2 ICs)

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Datasheet

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Package/Case

TO-220-3

Mounting Type

Through Hole

Product Series

IRF540

No. of Output

1

Output Type

Analog Voltage

Polarity

N-Channel

Dimensions (LxWxH) mm

10 x 4.4 x 15.65

Vds – Drain-Source Breakdown Voltage

100 V

Id – Continuous Drain Current

33 A

Rds On – Drain-Source Resistance

44 mOhms

Vgs – Gate-Source Voltage

20 V

Qg – Gate Charge

47.3 nC

Pd – Power Dissipation

140 W

Shipping Weight 0.008 kg
Shipping Dimensions 8 × 6 × 2 cm

The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications.

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 Features:

  1. Drain to source voltage Vds is 100V
  2. Gate to source voltage is ±20V
  3. On Resistance Rds(on) of 44mohm at Vgs of 10V
  4. Power dissipation Pd of 130W at 25°C
  5. Continuous drain current Id of 33A at Vgs 10V and 25°C
  6. Operating junction temperature range from -55°C to 175°C
  7. Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.

Package Includes:

1 x IRF540N (TO-220-3) MOSFET (Pack Of 2 ICs)

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