Datasheet
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₨ 98.00
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Out of stock
Package/Case |
TO-220-3 |
---|---|
Mounting Type |
Through Hole |
Product Series |
IRF540 |
No. of Output |
1 |
Output Type |
Analog Voltage |
Polarity |
N-Channel |
Dimensions (LxWxH) mm |
10 x 4.4 x 15.65 |
Vds – Drain-Source Breakdown Voltage |
100 V |
Id – Continuous Drain Current |
33 A |
Rds On – Drain-Source Resistance |
44 mOhms |
Vgs – Gate-Source Voltage |
20 V |
Qg – Gate Charge |
47.3 nC |
Pd – Power Dissipation |
140 W |
Shipping Weight | 0.008 kg |
Shipping Dimensions | 8 × 6 × 2 cm |
The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications.
Note: Image may vary from actual product in terms of Manufacturer/Brand name according to the availability.
1 x IRF540N (TO-220-3) MOSFET (Pack Of 2 ICs)
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